2016. 06. 01 1/7 semiconductor technical data KUS086N10D n-ch trench mos fet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h v dss = 100v, i d = 63a h drain-source on resistance : r ds(on) =8.6m ? (max.) @v gs = 10v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. g d s pin connection dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o max 0.1 n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source characteristic symbol rating unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 63 a @t c =100 ? 39 pulsed (note1) i dp 252* single pulsed avalanche energy (note 2) e as 125 mj repetitive avalanche energy (note 1) e ar 3.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 62.5 w derate above 25 ? 0.5 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.0 ? /w thermal resistance, junction-to-ambient r thja 110 ? /w
2016. 06. 01 2/7 KUS086N10D revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l =22.7 h, i s =63a, v dd =80v, r g =25 ? , starting t j =25 ? . note 3) i s ? 44a, di/dt ? 300a/ k , v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. 2 product name lot no 1 001 2 086n10 d 1 kus marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 100 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.05 - v/ ? drain cut-off current i dss v ds =100v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =31.5a - 6 8.6 m ? v gs =6v, i d =16a - - 12 dynamic total gate charge q g v ds =80v, i d =63a v gs =10v (note4,5) - 53 - nc gate-source charge q gs - 13 - gate-drain charge q gd - 14 - turn-on delay time t d(on) v dd =50v i d =63a r g =25 ? (note4,5) - 45 - ns turn-on rise time t r - 36 - turn-off delay time t d(off) - 138 - turn-off fall time t f - 46 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 3100 - pf output capacitance c oss - 1220 - reverse transfer capacitance c rss - 52 - source-drain diode ratings continuous source current i s v gs 2016. 06. 01 3/7 KUS086N10D revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - t j -50 0.8 0.9 1.0 1.2 1.1 050 100 200 150 drain current i d (a) drain current i d (a) fig6. i s - v sd - reverse drain current i s (a) 2.5 1.5 1.0 0.5 0 2.0 -50 200 100 050 150 junction temperature t j ( ) c junction temperature t j ( ) c source - drain voltage v sd (v) v gs =0v i ds =250ua v gs =5v v gs =7v, 10v v gs =4.5v v gs =10v i d =31.5a 56 34 278 100 c 25 c 10 3 10 2 10 2 10 -2 10 -1 10 0 10 1 10 1 10 0 10 3 10 2 10 1 10 -1 10 0 0.0 0.4 0.6 0.8 0.2 1.0 1.2 1.4 v ds = 3v 10 3 10 2 10 1 10 -1 10 0 v gs =7v, 10v v gs =4v v gs =3v v gs =2v v gs =0v fig5. i s - v sd - ? 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) source - drain voltage v sd (v) 100 c 25 c 10 3 10 2 10 1 10 -1 10 0 normalized on resistance
2016. 06. 01 4/7 KUS086N10D revision no : 0 junction temperature t j ( ) 0.4 1.4 1.2 1.0 0.8 0.6 1.6 25 -25 75 100 125 50 150 0 -50 fig8. v th - t j normalized gate - threshold voltage v th drain current i d (a) fig7. r ds(on) - i d on - resistance r ds(on) (m ) 20 5 0 15 10 0100 50 125 150 175 25 75 v gs =7v v gs =5v v gs =10v gate - charge q g (nc) 0 12 10 6 2 4 8 30 40 50 20 60 10 0 fig10. q g - v gs gate - source voltage v gs (v) fig 9. c - v ds drain - source voltage v ds (v) 0 10203040 c rss c oss c iss v ds =80v i d =63a capacitance (pf) 10 4 10 3 10 2 10 1 fig12. safe operation area drain current i d (a) drain - source voltage v ds (v) 10 3 10 2 10 2 10 0 10 0 10 1 10 1 10 -1 10 -1 t c = 25 single nonrepetitive pulse c dc 10ms 1ms 10us 100us operation in this area is limited by r ds(on) frequency=1mhz, v gs =0v junction temperature t j ( c) 0 100 80 60 20 40 75 25 125 100 150 50 0 fig11. i d - t j drain current i d (a)
2016. 06. 01 5/7 KUS086N10D revision no : 0 time (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0 fig13. transient thermal response curve transient thermal resistance ( ? /w) - duty factor, d= t 1 /t 2 t 1 t 2 p dm duty=0.5 s ingle pulse 0 .05 0.1 - r th(j-c) = 2.0 c/w max 0.02 0.2 0. 01
2016. 06. 01 6/7 KUS086N10D revision no : 0 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% v dss 0.8 z 0.8 v dss 0.5 v dss
2016. 06. 01 7/7 KUS086N10D revision no : 0 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
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